< 5 min
< 200° C

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A game changer in wafer-to-wafer Permanent Bonding

Take advantage of robust permanent bonding at low temperature for an unprecedented variety of materials.

It's easy — combine Impulse Current Bonding hardware with SB8 Gen2.

Technical Data

Wafer / Substrate
Wafer Size
4", 6" and 8"
Hardware Requirements
SB8 Gen2
Fully integrated into the SB8 Gen2 control software. The ICB hardware is fully integrated into the SB8 Gen2 Machine supply and safety concept
Footprint ICB Kit
Footprint (mm)
width x height x depth
ca. 800 x 800 x 630
No external supplies required. All supplies will be distributed and controlled from the SB8 Gen2

SB8 Gen2 Wafer Bonder

With the SB8 Gen2 Wafer Bonder SUSS MicroTec provides a semi-automated platform for multiple bonding processes. Handling wafers up to 200 mm as well as various shapes and types of substrates the SB8 Gen2 presents itself as a flexible tool for various applications and process environments. The SB8 Gen2 is suitable for packaging as well as structuring, meeting the requirements for MEMS, LED, advanced packaging, 2.5D integration, and 3D integration. more…

Low Temperature Bonding

Due to high interatomic diffusion at the material interface, Impulse Current Bonding offers the advantage of bonding glass to silicon at temperatures as low as 180°C. Process temperatures below 200°C can also be attained for market-relevant non-silicon substrate materials like sapphire, lithium niobate/tantalate, silicon carbide etc.

Multi-material Bonding

Impulse Current Bonding combines the robustness of Anodic Bonding with the material versatility of other, more complex bonding methods. As a breakthrough in field-assisted bonding, ICB can successfully bond materials featuring large differences in CTE (coefficients of thermal expansion), such as glass to GaAs, and even alkali-free glass to silicon.

3D car with slant headlights

Glass bonded to Sapphire (with PVD layer)
Temperature: 200 °C

3D car with ground projection system

ZrO2 bonded to Glass
Temperature: 180 °C

3D car interior with lighting dots on the ceiling

SiC (with PVD layer) bonded to Glass
Temperature: 200 °C

Offering Multiple Benefits

Durable Bond

High migration density leads to a strong and durable bond even at low temperatures. The interface created has a strength which exceeds that of the used bulk materials.

Surface Tolerance

Compared to other direct bonding methods, Impulse Current Bonding is less susceptible to surface imperfections for achieving a high quality bond. Therefore, it does not require cost-intensive and often challenging surface conditioning steps such as chemical-mechanical polishing (CMP) and plasma treatment.

Time and Cost-Saving Production

Besides the reduced need for surface preparation, the high migration density and low temperature lead to shorter process cycle times and significantly reduce overall energy consumption and cost per bond, making ICB highly appealing for mass production.

High Compatibility

Impulse Current Bonding can easily be used in conjunction with SUSS MicroTec’s permanent bonder product portfolio for aligned and unaligned wafer bonding. The process supports wafer sizes of 4, 6 and 8 inch in R&D, pilot line production and high volume environments.

Promising Applications

Example: MEMS

The lower thermal expansion of the dissimilar material pair during the bonding process induces less stress and thus avoids distortion or bending of the product. Especially for the MEMS industry where the bending of bonded wafers has an impact on device performance, this will improve yield rates and robustness.

Much more is possible: Engineered Substrates, Medical Applications/Microfluids, Power Devices, etc.

Download Brochure

SUSS LP50 Datasheet

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